class B RF power amplifier

Parameters

frequency

Hz

Output Power

W

Band width

Hz

PS Voltage

V_{I}

V

Min DS voltage

V_{D S \min}

V

Output

output voltage $V_{m}$

$V_{m} = V_{I} - V_{D S \min}$

Load resistance R

$P_{O} = \frac{V_{m}^{2}}{2 R}$

load current $I_{m}$

$I_{m} = \frac{V_{m}}{R}$

dc supply current $I_{I}$

$I_{I} = \frac{2}{\pi} I_{m}$

max drain current $I_{D M}$

$I_{D M} = \pi I_{I}$

max drain to source voltage $V_{D S M}$

$V_{D S M} = V_{I} + V_{m}$

dc supply power $P_{I}$

$P_{I} = V_{I} I_{I}$

Quality factor $Q_{L}$

$Q_{L} = \frac{f}{B W}$

drain efficiency $\eta_{D}$

$\eta_{D} = \frac{P_{o}}{P_{I}}$

power loss in the transistor $P_{D}$

$P_{D} = P_{I} - P_{o}$

maximum DS voltage $V_{D S \max}$

$V_{D S \max} = V_{I} + V_{m}$

resonant inductance L

$Q_{L} = \frac{R}{\omega_{0} L}$

resonant capacitance C

$Q_{L} = \frac{1}{\omega_{0} C} / R$

choke inductance $L_{f}$

$X_{L f} = \omega_{0} L_{f{=}} 10 R$

coupling capacitor $C_{c}$

$X_{C c} = \frac{R}{10} = \frac{1}{\omega_{0} C_{c}}$

class B RF power amplifier

frequency

Output Power

Band width

PS Voltage

Min DS voltage

output voltage VmV_{m}Vm​

Load resistance R

load current ImI_{m}Im​

dc supply current III_{I}II​

max drain current IDMI_{D M}IDM​

max drain to source voltage VDSMV_{D S M}VDSM​

dc supply power PIP_{I}PI​

Quality factor QLQ_{L}QL​

drain efficiency ηD\eta_{D}ηD​

power loss in the transistor PDP_{D}PD​

maximum DS voltage VDSmax⁡V_{D S \max}VDSmax​